Samsung is reportedly set to start mass-producing 3nm chips to surpass TSMC

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Samsung is expected to announce the start of mass production of 3nm chips next week. This surpasses TSMC, whose 3nm chip production is expected to start in the second half of this year.

According to a message report from the GSM arena quote Yonhap News, Compared to its 5nm process, Samsung’s 3nm node will result in a 35 percent reduction in area, a 30 percent increase in performance, or a 50 percent reduction in power consumption (which is required for Snapdragon 888 and Exynos 2100 was used). .

This is achieved by moving to a Gate All Around (GAA) design for transistors. The foundry can shrink transistors without sacrificing their current carrying capacity, which is the next step after FinFET. The MBCFET variant is the GAAFET design used in the 3nm node.

Last month, US Vice President Joe Biden paid a visit to Samsung’s Pyeongtaek plant to see a demonstration of the company’s 3nm technology. There were rumors that the company could spend $10 billion (nearly Rs.78,000) to build a 3nm foundry in Texas last year. The plant is reportedly scheduled to come online in 2024, with an investment that has grown to US$17 billion (nearly Rs.1.32 billion).

The yield of Samsung’s 3nm process “is approaching a similar level as the 4nm process,” the company said in October last year. Analysts believe Samsung’s 4nm node has had serious yield problems, although the company has never provided official statistics.

A 2nm MBCFET-based node is also included in the company’s roadmap for 2023, along with a second-generation 3nm node in 2025.

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